![]() In this study, we illustrate a simple and new approach towards ultralow voltage-controlled MRAMs using phase-field simulations. Nonetheless, no existing proposals have so far achieved low voltage, high storage density and room temperature operation all at the same time. 8)), and more recently using ferroelectric (FE) oxide as the tunnel barrier as in a Fe/BaTiO 3/(La,Sr)MnO 3 junction 9 where significant voltage control of tunnel magnetoresistance 6 was realized at rather low temperatures. Previous proposals include integrating a spin valve 5 or magnetic tunnel junction (MTJ) 6 unit onto a multiferroic layer (for example, Cr 2O 3 (ref. One promising solution is to develop voltage-write MRAM devices 4, that is, manipulating magnetization directly using electric voltage rather than current. ![]() This would also cause severe cross-talk among neighbouring cells when miniaturizing the device size for higher storage capacity. ![]() However, mass production of MRAMs has long been hampered by their high writing energy from Ampère-current-induced magnetic field 2, 3. Magnetoresistive random access memory (MRAM), because of its moderately fast access time and almost unlimited endurance, has offered a tantalizing application potential as next-generation non-volatile integrated memories 1.
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